50V GaN Transistor provides 200W from RFMW

Qorvo QPD3601 GaN power transistor has a P3dB of 180W from 3.4 to 3.6GHz RFMW LtdRFMW, Ltd. announces design and sales support for a high efficiency, high gain transistor from Qorvo. The Qorvo QPD3601 GaN power transistor has a P3dB of 180W and 200W Psat for Band 42 wireless communications infrastructure and microcell designs in the 3.4 to 3.6GHz frequency range. Offering typical drain efficiency of 58% and linear gain of 22dB, the QPD3601 draws 420mA from a 50V supply.  Qorvo offers this transistor in an eared, ceramic, air cavity package.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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