RFMW, Ltd. announces design and sales support for a high efficiency, high gain transistor from Qorvo. The Qorvo QPD3601 GaN power transistor has a P3dB of 180W and 200W Psat for Band 42 wireless communications infrastructure and microcell designs in the 3.4 to 3.6GHz frequency range. Offering typical drain efficiency of 58% and linear gain of 22dB, the QPD3601 draws 420mA from a 50V supply. Qorvo offers this transistor in an eared, ceramic, air cavity package.
50V GaN Transistor provides 200W from RFMW
By RFMWUpdated:No Comments1 Min Read