RFMW, Ltd. announces design and sales support for a Qorvo GaN on SiC transistor serving land mobile and military radios, active antenna systems and small cell radios. The QPD0030 is a 45W transistor housed in a plastic, 4 x 3 mm QFN operating from DC to 4GHz. With a 48 V bias, power added efficiencies are as high as 72%. Small signal gain is rated at 22.3 dB. This combination of high gain, high efficiency, low cost and small size make the QPD0030 an ideal unmatched transistor for a wide range of applications.