Dual Path Switch/LNA serves 5G AAS

IDT's F0453B is an integrated, dual-path, RF switch/LNA with 34 dB gain and 1.35 dB noise figure from 3400 to 3800 MHzRFMW announces design and sales support for a high performance FEM from Integrated Device Technology, Inc. (IDT). The F0453B is an integrated, dual-path, RF front-end switch and LNA featuring up to 34 dB of gain and 1.35 dB noise figure. Designed for Active Antenna Systems (AAS) and Massive MIMO systems operating from 3400 to 3800 MHz, the device supports 3.3V system designs. OIP3 is 23 dBm with P1dB of 15 dBm in high gain mode. The F0453B is built on SOI technology offering a lower cost alternative to GaAs devices while maintaining high linearity and low power consumption. Packaged as a small, 5 x 5 mm QFN.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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