90 Watt Transistor offers High Efficiency and High Gain

RFMW announces design and sales support for a high gain, GaN transistor with excellent efficiency. The Qorvo QPD0060 spans DC to 2.7 GHz with 90 Watts of P3dB output power and maximum drain efficiency of 74.7%. Linear gain is 19.5 dB and efficiency-tuned P3dB gain is 21.5 dB. Designed for 48 V operation, the QPD0060 serves wireless infrastructure, active antenna systems, military & commercial radar, land mobile and military radio communications and test instrumentation. Functional as either a driver or final stage it’s both CW and pulse capable. Offered in a plastic overmold, SMT package.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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