RFMW announces design and sales support for a high-power transistor from Ampleon. The ART2K0PE power LDMOS transistor provides 2000 W of pulsed RF energy for ISM applications in the HF to 400 MHz band. Offering 28.5 dB of gain and drain efficiency of 73%, this transistor supports plasma generators, MRI systems, CO2 lasers and particle accelerators. Other uses are found in radio and VHF TV broadcast transmitters as well as HF communications and Radar systems in the Aerospace industry. High breakdown voltage enables class E operation up to 50 volts VDS while the ART2K0PE is qualified up to a maximum VDS of 65 V. The device is characterized from 30 to 65 volts. Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor. Capable of withstanding load mismatches corresponding to a VSWR of 65:1
65V LDMOS Transistor offers 2000 Watts
By RFMW