RFMW announces design and sales support for a dual-path, GaN transistor. Supporting 20 Watt or 40 Watt designs, Qorvo’s QPD0211 has two transistors housed in a 7 x 6 mm plastic package. This dual-path discrete GaN on SiC HEMT, single-stage power transistor operates from 2.5 to 2.7 GHz. Applicable for asymmetric Doherty applications in 5G Massive MIMO BTS, it can deliver PAVG of 7.6 W at +48 V operation. Device gain is 14.5 dB. The QPD0211 also supports active antennas and may be used as a macro, base station driver.
Flexible Dual-Path Transistor for Microcell and Macrocell
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