Flexible Dual-Path Transistor for Microcell and Macrocell

Qorvo’s QPD0211 dual-path, GaN transistor supports 20 or 40 Watt asymmetric Doherty applications from 2.5 to 2.7 GHz.

RFMW announces design and sales support for a dual-path, GaN transistor. Supporting 20 Watt or 40 Watt designs, Qorvo’s QPD0211 has two transistors housed in a 7 x 6 mm plastic package. This dual-path discrete GaN on SiC HEMT, single-stage power transistor operates from 2.5 to 2.7 GHz. Applicable for asymmetric Doherty applications in 5G Massive MIMO BTS, it can deliver PAVG of 7.6 W at +48 V operation. Device gain is 14.5 dB. The QPD0211 also supports active antennas and may be used as a macro, base station driver.


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About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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