GaN IMFET for L-Band Radar

The Qorvo QPD1006 GaN IMFET provides 450 Watts of pulsed RF power from 1.2 to 1.4 GHz

RFMW announces design and sales support for a fully matched GaN IMFET from Qorvo. The QPD1006 provides 450 Watts of pulsed RF power from 1.2 to 1.4 GHz along with greater than 300 Watts power output for CW applications. Linear gain is 17.5 dB from this internally matched, discrete GaN on SiC HEMT device. Supporting 50V for pulsed applications and 45V for CW, the device is housed in a low thermal resistance package ideal for both military and commercial radar.


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About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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