GaN IMFET for L-Band Radar

The Qorvo QPD1006 GaN IMFET provides 450 Watts of pulsed RF power from 1.2 to 1.4 GHz

RFMW announces design and sales support for a fully matched GaN IMFET from Qorvo. The QPD1006 provides 450 Watts of pulsed RF power from 1.2 to 1.4 GHz along with greater than 300 Watts power output for CW applications. Linear gain is 17.5 dB from this internally matched, discrete GaN on SiC HEMT device. Supporting 50V for pulsed applications and 45V for CW, the device is housed in a low thermal resistance package ideal for both military and commercial radar.


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RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.

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