GaN IMFET for X-Band Radar

The Qorvo QPD9300 discrete GaN on SiC HEMT IMFET provides 34 Watts of pulsed RF power from 9.2 to 9.7 GHz

RFMW announces design and sales support for a fully matched GaN IMFET from Qorvo. The QPD9300 provides 34 Watts of pulsed RF power from 9.2 to 9.7 GHz for narrowband and marine Radar applications. Linear gain is 9 dB from this internally matched, discrete GaN on SiC HEMT device. Supporting 28V operation, the device is housed in a low thermal resistance package.


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About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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