2 x 20 Watt Transistor for 5G mMIMO Infrastructure

Qorvo’s QPD0305 contains two, 20 Watt transistors for 3.4 to 3.8 GHz massive MIMO microcell and macrocell base stations

 

RFMW announces design and sales support for a dual-path, GaN transistor. Qorvo’s QPD0305 contains two, 20 Watt transistors for 3.4 to 3.8 GHz massive MIMO microcell and macrocell base stations. Used as individual drivers or combined as a symmetric Doherty amplifier, each discrete GaN on SiC HEMT, single-stage power transistor provides 17.4 dB of gain. Housed in a low-cost, 7 x 6.5 mm plastic package the RF input is pre-matched for ease of use. The QPD0305 also supports active antenna designs.


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About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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