RFMW announces design and sales support for an L-Band transistor from Qorvo. The QPD1029L power transistor offers 1500 Watts of RF power from 1.2 to 1.4 GHz in an air-cavity ceramic package. Internal input prematching reduces external board matching complexity and saves board space. Linear gain is 21 dB for this GaN on SiC device serving CW and Pulsed radar applications. With 75% power added efficiency, the QPD1029L operates from a 65 V drain voltage consuming 1500 mA.