Power Amplifier Module for LTE and 5G

Posted On 22 Sep 2021

The NXP A3M39TL039 is a 28 V, 50-ohm matched integrated Doherty LDMOS Multi-Chip Module covering the cellular infrastructure bands between 3700-3980 MHz.

RFMW announces design and sales support for a power amplifier module from NXP. The A3M39TL039 is a 28 V, 50-ohm matched integrated Doherty LDMOS Multi-Chip Module covering the cellular infrastructure bands between 3700-3980 MHz. With a 47 dBm (50 W) peak power at 39% power added efficiency and a dual-stage gain of 27 dB, it comes in a compact 10 x 6 mm LGA over-molded plastic package.

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RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.