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RFMW announces design and sales support for a power amplifier module from NXP. The A3M39TL039 is a 28 V, 50-ohm matched integrated Doherty LDMOS Multi-Chip Module covering the cellular infrastructure bands between 3700-3980 MHz. With a 47 dBm (50 W) peak power at 39% power added efficiency and a dual-stage gain of 27 dB, it comes in a compact 10 x 6 mm LGA over-molded plastic package. |
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Power Amplifier Module for LTE and 5G
By RFMW