Power Amplifier Module for LTE and 5G

The NXP A3M39TL039 is a 28 V, 50-ohm matched integrated Doherty LDMOS Multi-Chip Module covering the cellular infrastructure bands between 3700-3980 MHz.

RFMW announces design and sales support for a power amplifier module from NXP. The A3M39TL039 is a 28 V, 50-ohm matched integrated Doherty LDMOS Multi-Chip Module covering the cellular infrastructure bands between 3700-3980 MHz. With a 47 dBm (50 W) peak power at 39% power added efficiency and a dual-stage gain of 27 dB, it comes in a compact 10 x 6 mm LGA over-molded plastic package.


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About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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