DC-20 GHz, 180 um Discrete GaAs pHEMT Die

Posted On 17 Feb 2022

Tag: Qorvo, QPD2018D, TGF2018

Qorvo’s DC to 20 GHz QPD2018D is typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency

RFMW announces design and sales support for a discrete 180-Micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2018D typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression making it appropriate for high efficiency applications. Bias voltage is 8 volts for broadband wireless, aerospace and defense applications.

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RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.