Author: RFMW

RFMW announces design and sales support for a high gain, GaN transistor with excellent efficiency. The Qorvo QPD0050 spans DC to 3.6 GHz with 75 Watts of P3dB output power and maximum drain efficiency of 78%. Linear gain is 22 dB and efficiency-tuned P3dB gain is 19.4 dB. Designed for 48 V operation, the QPD0050 serves military & commercial radar, land mobile radio communications and test instrumentation. The device can be used in Doherty architecture for the final stage of small cells, microcells, and active antenna systems or, as a driver in a macrocell base station amplifier. Offered in a…

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RFMW announces design and sales support for a family of high-power switches from Skyworks Solutions. Designed for TDD 2G/3G/4G micro and macro-cell base stations, the SKY12241-492LF, SKY12242-492LF and SKY12245-492LF deliver leading performance and efficiency. As data-intensive multimedia and IoT applications continue to proliferate, cellular infrastructure solutions must become more robust to meet increasing network demands. These 50 and 100 Watt switches enable high data rates with low power consumption for next generation wireless devices. The SKY12241-492LF provides 50 Watt CW power handling from 1.8 to 3 GHz. The SKY12242-492LF provides 100 Watt CW power handling from 1.8 to 3 GHz…

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RFMW announces design and sales support for a 10 MHz to 6 GHz RF power limiter capable of handling 100 watts of pulsed input power. The pSemi PE45361 is a monolithic structure up to 8 times smaller than discrete, PIN-diode solutions and eliminates thermal hysteresis. The adjustable input, 1dB compression point (limiting threshold) is set from +7 to +13 dBm via a low current control voltage (VCTRL), eliminating the need for external bias components such as DC blocking capacitors, RF choke inductors and bias resistors. Fast response time of <1 ns ensures instantaneous protection of sensitive components and rapid return…

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RFMW announces design and sales support for a series of coaxial, mmWave, 5G isolators from DiTom Microwave. The D3I2731Q isolator covers Ka-band frequencies from 27 to 31 GHz with 20 dB of isolation. A single-junction design, insertion loss is only 0.6 dB maximum, preserving precious power in the mmWave bands. Average power handing is 5W (2W reflected power). The D3I2731Q is offered with 2.4 mm female connectors having a maximum VSWR of 1.25:1 and are available with any combination of male or female connectors on the input/output. 2.92 mm (K) connectors are also an option. With operating temperatures from -20…

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RFMW announces design and sales support for a MMIC power amplifier. The Qorvo QPA1022D spans 8.5 to 11 GHz with 4 Watts of Psat output power. Offered in a 2.65 x 1.25 mm DIE format, it can support tight lattice spacing requirements for phased array radar applications and is an ideal component to support test instrumentation and commercial communication systems. Small signal gain is up to 31 dB while power gain is 24 dB. Biased from a 22 volt supply, the QPA1022D offers the advantages of GaN performance and includes integrated blocking capacitors and built-in power detector.

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RFMW announces design and sales support for Skyworks SKY16601-555LF PIN diode limiter module covering the frequency range of 0.5 to 6.0 GHz. The SKY16601-555LF addresses the need for passive protection of LNAs in microwave receiver applications. It is a fully integrated PIN diode, low-threshold limiter module in a 2.5 x 2.5 mm SMT package. Capable of handling 230 W pulsed power, insertion loss is only 0.1 dB while return loss is specified at 27.5 dB. Typical threshold level is 11 dBm with a flat leakage power of 13 dBm at 20 dBm input. Low distortion highlights this device making it…

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RFMW announces design and sales support for a high gain, GaN transistor with excellent efficiency. The Qorvo QPD0060 spans DC to 2.7 GHz with 90 Watts of P3dB output power and maximum drain efficiency of 74.7%. Linear gain is 19.5 dB and efficiency-tuned P3dB gain is 21.5 dB. Designed for 48 V operation, the QPD0060 serves wireless infrastructure, active antenna systems, military & commercial radar, land mobile and military radio communications and test instrumentation. Functional as either a driver or final stage it’s both CW and pulse capable. Offered in a plastic overmold, SMT package.

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RFMW announces design and sales support for a high frequency power amplifier from Qorvo. The Qorvo QPA2210D offers 2.5 Watts of linear power at 25 dBc IMD3 with small signal gain of 25 dB. This linear power and high gain are ideal for Ka-Band satellite communication systems operating within 27 to 31 GHz as well as mmWave 5G infrastructure radios. The QPA2210D has a saturated output power of 7 Watts. Drawing 200 mA from a 20 V supply, this PA is offered in a 2.74 x 1.432 mm DIE.

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RFMW announces design and sales support for a high gain and high peak-power driver amplifier. The Qorvo QPA9121 provides 28 dB of gain with up to ½ Watt of RF power from 2300 to 5000 MHz. Drawing only 95 mA from a single, 5 V supply, the QPA9121’s low power consumption provides solutions in wireless infrastructure, repeaters and distributed antenna systems. OIP# is 32 dBm from this 50 ohm, internally matched device packaged in a 3 x 3 mm QFN.

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RFMW announces design and sales support for a high power amplifier with excellent efficiency and linearity. Offering industry leading 35 Watts of X-Band power for satellite communications, radar and PtP applications, Qorvo’s QPA1006D is a wide band GaN on SiC power amplifier covering 10.7 – 12.7 GHz. Large-signal gain is >17 dB while achieving >39% power-added efficiency. Small signal gain is 22 dB. The QPA1006D is available as a 6.0 x 4.2 mm DIE.

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