RFMW, Ltd. announces design and sales support for a versatile, cost-effective GaN transistor from NXP. NXP’s MMRF5017HS operates from 30 to 2200MHz and offers 125W CW in narrow band applications and 90W CW in broadband applications. For pulsed applications (100uSec, 20% duty cycle), the transistor provides up to 200W output. With up to 18dB of gain, the MMRF5017HS is suitable for applications such as Radar, jammers, EMC testing, emergency service radio and cellular infrastructure. GaN on SiC technology offers high power densities. Coupled with 50V operation, system efficiency is increased and overall operating costs reduced. Offered in a flange package, broadband, 30-940MHz reference designs are available.