RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2120, a discrete 1200-Micron GaAs pHEMT FET. Available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach, the TGF2120 is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. The TGF2120 was designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. The TriQuint TGF2120 provides 31dBm P1dB with 11dB associated gain and power added efficiency (PAE) of 57%. A silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers up to K-band where high efficiency and linearity are required. The TGF2120 is part of a family of high-efficiency pHEMT power FETs providing a broad selection of output powers.
RFMW Introduces 1200-Micron Discrete FET from TriQuint Semiconductor
By RFMW