RFMD Introduces World’s First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

RFMD has announced the introduction of the world’s first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. RFMD is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market. According to industry analysts the GaN microelectronics market is expected to more than triple to $334 million by 2017, representing a compound annual growth rate (CAGR) of 28%.┬áThis market growth comes from both military (radar, electronic warfare, communications) and commercial (power management, cellular, CATV, land mobile radios) applications.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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