RFMD has announced the introduction of the world’s first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. RFMD is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market. According to industry analysts the GaN microelectronics market is expected to more than triple to $334 million by 2017, representing a compound annual growth rate (CAGR) of 28%. This market growth comes from both military (radar, electronic warfare, communications) and commercial (power management, cellular, CATV, land mobile radios) applications.
RFMD Introduces World’s First 6-Inch GaN-on-SiC Wafers for RF Power Transistors
By RFMW