RFMW, Ltd. announces design and sales support for TriQuint’s TGM3015-SM, a 3x3mm, plastic QFN packaged GaN transistor offering 10W P3dB. Linear power gain is up to 17.1dB within the 0.03 to 3.0GHz bandwidth of this device. PAE3dB of the TGM3015-SM is >62% which typifies TriQuint GaN efficiency. Operating from a 32V source, the TriQuint TGM3015-SM is input matched to 50 ohms and serves applications in Land Mobile Radio, Radar and test instrumentation.
10W GaN Transistor from RFMW
By RFMW