RFMW Broadband GaN Transistors provide 65W

RFMW, Ltd. announces design and sales support for two unmatched discrete GaN on SiC HEMTs. Operating from DC to 3.7 GHz with a 50V supply rail, Qorvo provides the QPD1015L in an eared package and the QPD1015 in an earless package. Both transistors offer 20dB of gain and a Psat of 48.5dBm. PAE is 74%. Target markets include commercial and military radar, communications, avionics, jammers and test instrumentation.