RFMW Broadband GaN Transistors provide 65W

Qorvo GaN transistors QPD1015L and QPD1015 offer 20dB of gain from DC to 3700MHzRFMW, Ltd. announces design and sales support for two unmatched discrete GaN on SiC HEMTs. Operating from DC to 3.7 GHz with a 50V supply rail, Qorvo provides the QPD1015L in an eared package and the QPD1015 in an earless package. Both transistors offer 20dB of gain and a Psat of 48.5dBm. PAE is 74%. Target markets include commercial and military radar, communications, avionics, jammers and test instrumentation.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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