2 Watt X-Band Power Amplifier

The Qorvo QPA2610, GaN on SiC amplifier provides 2 W of saturated output power with 23 dB large signal gain from 8.5 to 10.5 GHz

 

RFMW announces design and sales support for a high performance power amplifier. The Qorvo QPA2610, GaN on SiC amplifier provides 2 W of saturated output power with 23 dB large signal gain from 8.5 to 10.5 GHz. With 47% power-added efficiency at 20 V drain bias, RF ports are matched to 50 Ω and include integrated DC blocking capacitors. The QPA2610 is ideally suited for phased array radar applications where tight lattice spacing is required. Offered in a 5 x 5 mm plastic overmold QFN package.


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About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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