2 Watt X-Band Power Amplifier

The Qorvo QPA2610, GaN on SiC amplifier provides 2 W of saturated output power with 23 dB large signal gain from 8.5 to 10.5 GHz

 

RFMW announces design and sales support for a high performance power amplifier. The Qorvo QPA2610, GaN on SiC amplifier provides 2 W of saturated output power with 23 dB large signal gain from 8.5 to 10.5 GHz. With 47% power-added efficiency at 20 V drain bias, RF ports are matched to 50 Ω and include integrated DC blocking capacitors. The QPA2610 is ideally suited for phased array radar applications where tight lattice spacing is required. Offered in a 5 x 5 mm plastic overmold QFN package.


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RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.

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