High Linearity GaAs MESFET

The Microwave Technology MwT-7F GaAs MESFET delivers 21 dBm P1dB at 12 GHz for high-gain and medium linear power in the 500 MHz to 26 GHz frequency range.

RFMW announces availability of discrete devices from Microwave Technology (MwT). The MwT-7F GaAs MESFET delivers 21 dBm P1dB at 12 GHz and is ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range. Small signal gain is 15 dB. Offered in a 365 x 250 micron chip, the MwT-7F can be used in military and hi-rel SWaP designs and is also available in multiple packaged configurations, all with MTBF values better than 1×108 hours at 150 C channel temperature.


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About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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