GaAs MESFET for Hi-Rel Applications
Posted On 24 Nov 2021
RFMW announces availability of discrete devices from Microwave Technology (MwT). The MwT-9F GaAs MESFET delivers 26.5 dBm P1dB at 12 GHz and is ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range. Small signal gain is 11 dB. Offered in a 485 x 315 micron chip, the MwT-9F can be used in military and hi-rel SWaP designs and is also available in multiple packaged configurations, all with MTBF values better than 1×108 hours at 150 degrees C channel temperature.