NXP recently launched a new portfolio of discrete Gallium Nitride (GaN) transistors to expand 5G Massive MIMO coverage. The transistors enable easy deployment of 5G Massive MIMO in urban and suburban areas.
NXP’s proprietary RF GaN technology is manufactured in their new Chandler (Arizona) fab and available through RFMW, their specialist RF distributor. This launch provides a GaN portfolio covering the 5G cellular bands between 2.3 and 4.0GHz.
A key benefit is that NXP’s GaN technology has a low-memory effect designed to maximizse linearity and reduce Digital Pre-Distortion (DPD) complexity.
The portfolio covers 48V driver stages, allowing a single amplifier supply voltage for the lineup. Engineers can design high-efficiency power amplifiers with optimum power consumption, size, and weight for easier deployment.
Portfolio
The portfolio covers both driver and final stage discrete GaN transistors suitable for 10 Watt 32T32R and 5 Watt 64T64R Massive MIMO antennas. Most transistors share the same DFN 7 x 6.5 package.
| Antenna | Orderable Part # | Frequency Band | Stage | Package (mm) |
|
32T32R (10 W)
|
A5G23H110NT4 | 2.3 GHz | Final | DFN 7×6.5 |
| A5G26H110NT4 | 2.6 GHz | Final | DFN 7×6.5 | |
| A5G35H110NT4 | 3.5 GHz | Final | DFN 7×6.5 | |
| A5G35H120NT2 | 3.5 GHz | Final | DFN 7×10 | |
| A5G37H110NT4 | >3.7 GHz | Final | DFN 7×6.5 | |
| A5G38H120NT2 | >3.7 GHz | Final | DFN 7×10 | |
| A5G26S008NT6 | 2.6 GHz | Driver | DFN 7×6.5 | |
| A5G35S008NT6 | 2.6 GHz | Driver | DFN 4.5×4 |
|
64T64R (5 W) |
A5G23H065NT4 | 2.3 GHz | Final | DFN 7×6.5 |
| A3G26D055NT4 | 2.3 GHz | Final | DFN 7×6.5 | |
| A5G35H055NT4 | 3.5 GHz | Final | DFN 7×6.5 | |
| A5G38H045NT4 | >3.7GHz | Final | DFN 7×6.5 | |
| A5G26S004NT6 | 2.6 GHz | Driver | DFN 7×6.5 | |
| A5G35S004NT6 | 3.5 GHz | Driver | DFN 4.5×4 |
Typical Lineup
A typical lineup for 2.6GHz is the A5G26S008N with 19dB of gain, driving the A5G26H110N for a 15 Watt average output power. This provides a cost-effective lineup for a 32T32R Massive MIMO 5G antenna.
Samples and Evaluation Boards
Samples of the 5G Discrete Massive MIMO transistors are available now from RFMW’s sample program for both 32T32R and 64T64R antenna designs. Reference circuit evaluation boards are also available to order for the following frequency bands:
| Orderable Board Part # | Antenna | Frequency Band |
| A5G26H110N-2496 | 32T32R | 2496-2690 GHz |
| A5G35S008N-3400 | 32T32R | 3400-3600 GHz |
| A5G35H110N-3400 | 32T32R | 3499-3600 GHz |
| A5G38H120N-3700 | 32T32R | 2515-2675 GHz |
| A3G26D055N-2600 | 64T64R | 2515-2675 GHz |
| A5G35S004N-3400 | 64T64R | 3400-4300 GHz |
| A5G38H045N-3700 | 64T64R | 3700-3980 GHz |
Please contact your local RFMW field sales engineer or contact us here for further information.
About Tim Daniels
 |
Tim Daniels is a Supplier Business Manager at RFMW specializing in transistor and MMIC technologies. With over 20 years of RF industry experience, Tim is a chartered engineer that holds a master’s degree in electronics innovation and a bachelor’s degree in electronics with communications. His expertise enables him to provide comprehensive design recommendations and technical support for RFMW’s customers. Tim enjoys working with engineers from around the globe and is eager to find innovative solutions to new challenges. |
