RFMW’s 200W GaN Transistor supports 3.5GHz Bandwidth

Ampleon CLF1G0035S-200P 200W GaN Transistor. DC to 3.5GHz w/11dB gain. 50VRFMW, Ltd. announces design and sales support for a 200W CW power transistor from Ampleon. The CLF1G0035S-200P GaN HEMT is usable from DC to 3.5GHz for broadband applications in wireless infrastructure, public mobile radios, jammers and Radar. The Ampleon CLF1G0035S-200P offers up to 11dB of associated gain in CW applications or 14dB of gain in pulsed applications. Operating from a 50V supply, the transistor draws only 300mA in class AB configurations with 44% typical efficiency. And, capable of withstanding mismatches up to VSWR = 10:1, the CLF1G0035S-200P shows the excellent ruggedness Ampleon is known for. Rise/fall time is 9nS. The CLF1G0035S-200P is offered in an earless Gemini package. A bolt-down version is offered as the CLF1G0035-200P.

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