SMT Transistor offers 2000 Watts Pulsed RF

RFMW announces design and sales support for a high-power transistor from Ampleon. The ART2K0PEG LDMOS power transistor provides 2000 W of pulsed RF energy for ISM applications in the HF to 400 MHz frequency band. Offering 28.5 dB of gain and drain efficiency of 73%, this transistor supports plasma generators, MRI systems, CO2 lasers and particle accelerators. High breakdown voltage enables class E operation up to 50 volts VDS while the ART2K0PEG is qualified up to a maximum VDS of 65 V. The device is characterized from 30 to 65 volts. Integrated dual-sided ESD protection enables class C operation and complete switch off of the transistor. This “gull-wing”, SMT transistor is capable of withstanding load mismatches corresponding to a VSWR of 65:1. Additional uses are found in radio and VHF TV broadcast transmitters as well as HF communications and Radar systems in the Aerospace industry.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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