NXP GaN Transistors support RF Energy Applications

 

NXP’s MRF24G300HSR5 RF power GaN on SiC transistor provides 330 Watts of CW power from 2400 to 2500 MHz

 

RFMW announces design and sales support for high-gain, high-efficiency transistors. NXP’s MRF24G300HSR5 RF power GaN on SiC transistor provides 330 Watts of CW power from 2400 to 2500 MHz for ISM band, RF Energy applications. It’s the first solid state device to exceed the efficiency of magnetrons for industrial heating applications, welding and drying. Other potential uses include medical diathermy and microwave ablation. Operating from a 48V supply, the MRF24G300HSR5 has a pre-matched RF input and boasts 73% efficiency and >15 dB of gain. The higher power density of GaN on SiC enables a high output impedance, making devices easier to match across the band and ensuring a cooler channel temperature for higher reliability.


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About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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