NXPs General Purpose Airfast GaN Transistor

NXP’s A3G26D055NT4 GaN on SiC discrete RF transistor delivers 55 Watts of peak power from 100 to 2690 MHz

RFMW announces design and sales support for a versatile, GaN on SiC discrete transistor. NXP’s A3G26D055NT4 RF transistor delivers 55 Watts of peak power from 100 to 2690 MHz for applications ranging from cellular infrastructure and RF energy to wideband communications including 5G mMIMO radios. Operating from a 48V supply, the A3G26D055NT4 has a pre-matched RF input and boasts 50% efficiency and >13 dB of gain. The higher power density of GaN on SiC enables a high output impedance, making devices easier to match across the device bandwidth and ensuring a cooler channel temperature for higher reliability.


Join RFMW's Newsletter
About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

Related Posts

Leave a Reply