RFMW announces design and sales support for a versatile, SiGe driver amplifier from NXP. The BTS6201U amplifier delivers high linearity with 27 dBm typical P1dB output power in its frequency range of 2300 to 4200 MHz. A dual-stage, single-ended design provides 31 dB of gain and is matched to 50 Ohms with integrated bias control, supporting fast switching for TDD systems. Class AB drain efficiency is 20% and signal bandwidth (IBW) is 200 MHz from this 5 V device. Typical applications are high-linearity pre-drivers in cellular infrastructures, such as bands B40, n41, B42, n77, n78 and C-band. Offered in a 3 x 3 mm QFN over-molded plastic package. |