Rugged Transistor delivers 150 Watts for ISM

The Ampleon ART150FEU, LDMOS power transistor provides 150 W of pulsed or CW RF energy for ISM applications ranging from 1 to 650 MHz.

RFMW announces design and sales support for a high-power transistor from Ampleon. The ART150FEU, LDMOS power transistor provides 150 W of pulsed or CW RF energy for ISM applications ranging from 1 to 650 MHz. Offering up to 31 dB of gain and typical drain efficiency of >72%, this transistor supports plasma generators, MRI systems, CO2 lasers and particle accelerators. High breakdown voltage enables class E operation up to 50 volts VDS while the ART150FEU is qualified up to a maximum VDS of 65 V. The device is characterized from 30 to 65 volts. Integrated dual-sided ESD protection enables class C operation and complete switch off of the transistor. Advanced Rugged Technology (ART) is capable of withstanding load mismatches corresponding to a VSWR of 65:1. Additional uses are found in radio and VHF TV broadcast transmitters as well as HF communications and Radar systems.


Join RFMW's Newsletter
About the Author
RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.

Related Posts

Leave a Reply