What made you select Ampleon’s CLS3H2731L-700 as the featured products for the month?
Designing radar systems in the S-band (2.7 GHz to 3.1 GHz) presents unique challenges, including achieving high output power and long pulse capability while maintaining system efficiency, thermal stability, and ruggedness under demanding operating conditions. Engineers must balance the demand for reduced size and weight whilst continuing to improve Radar resolution and range performance. GaN Sic HEMT technology offers substantial improvements in power density and efficiency, low thermal resistance, and ruggedness, which can significantly simplify these challenges.
The Ampleon CLS3H2731L-700 is a 700W GaN HEMT transistor optimized for S-band short or long-pulse radar applications. Internally pre-matched for operation from 2.7 to 3.1 GHz, it offers high input impedance, excellent ruggedness, and low thermal resistance. It is ideal for pulsed radar transmitters that demand power, efficiency, and reliability. It offers superior performance in long-pulse Radar operation, characterized at up to 300 µs pulse widths and 10% duty cycle.
What are the key features/specifications of the CLS3H2731L-700 Series?
- 700W output power across 2.7 GHz to 3.1 GHz
- 300 µs long-pulse capability
- Internally pre-matched for simplified amplifier design
- Gallium Nitride on Silicon Carbide (GaN HEMT) technology
- High power efficiency for improved system performance
- High input impedance for flexible integration
- Low thermal resistance for enhanced reliability
- Excellent ruggedness under harsh operating conditions
What are common markets/applications?
- S-band radar transmitters
- Short and long-pulsed radar systems operating from 2.7 GHz to 3.1 GHz
- Air traffic control, weather radar, and defense radar systems
More Ampleon Expert Product Picks from Tim Daniels
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More Technical Articles from Tim Daniels
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Advanced Rugged LDMOS Transistors
Optimal Time-to-Market Tools for Solid-State Microwave Systems
About Tim Daniels
Tim Daniels is the Director of Technical Solutions & Product Strategy at RFMW, specializing in RF Power transistor and MMIC technologies. With over 20 years of RF industry experience, Tim is a chartered engineer and holds a master’s degree in electronics innovation and a bachelor’s degree in electronics with communications. His expertise enables him to provide comprehensive design recommendations and technical support for RFMW’s customers. Tim enjoys working with engineers from around the globe to find innovative solutions to new challenges. He is a licensed UK radio amateur and, in his spare time, experiments on the VHF and Microwave bands.
