Quantum computing is one of the most powerful tools developed in the past few decades. Quantum computers (QCs) solve otherwise unsolvable problems in physics and mathematics, all because of the unique properties of their design and construction. To understand why a QC works so effectively we’ll dive briefly into what quantum computing is, why cryogenics are essential in quantum computing design, and what qubits are and how they are used. Additionally, we’ll discuss a critical design piece that doesn’t get talked about as much: the importance of interconnect components in quantum computing designs.If you work in RF and Microwave you…
Author: RFMW
We would like to extend a big “thank you!” to our suppliers who participated in our RFMW supplier showcase this year at IMS 2023. This showcase represents a mixture of the leading products and product lines currently available in the RF and Microwave industry. RFMW Supplier Showcase at IMS 2023 3DRFE – Featured products included the P25A and M2410A RF Generators Akoustis is a high-tech BAW RF filter solutions company that is pioneering next-generation materials science to address the market requirements for improved RF filters. Featured products include the A10159 5.9 GHz BAW Filter, A10655 and A10665 Wi-Fi 6E&7 BAW Filters,…
Article By Microchip Product Manager Baljit Chandhoke RF systems need power amplifiers (PAs) to deliver linear efficient high output power. As systems move to higher-order modulation schemes such as 64/128/256 Quadrature Amplitude Modulation (QAM), they also must deliver high linearity and efficiency in denser environments with stringent peak-to-average power ratio (PAPR). This performance is critical in Aerospace & Defense (A&D), Satellite Communications (Satcom) and 5G Communications. A new generation of Gallium Nitride (GaN) on Silicon Carbide (SiC) Monolithic Microwave Integrated Circuits (MMIC) PAs offers a solution to these challenges with the highest power density to generate high linear output power with high…
Introduction by Kirk BartonHow can a designer approach reducing oscillations and voltage spikes in semiconductor switches? Unwanted oscillations and voltage spikes in semiconductor switches can pose serious challenges and potentially compromise the overall operation of electronic circuits. The occurrence of oscillations can generate high-frequency noise, which in turn can interfere with the functioning of nearby electronic components. This can lead to signal distortion, reduced signal quality, and other related issues that can adversely affect the performance and reliability of the circuit. Voltage spikes generated during switching can cause damage to the semiconductor switch itself, as well as other connected electronic…
What made you select Marki’s MFBC-0000XPSM family as products to feature? I’ve chosen the MFBA-0000XPSM series of MMIC surface mount bandpass filters due to the repeatability, higher frequency operation and small form factor. It’s not common to find this type of performance and consistency at this size and cost! What are the key features and specifications of the MFBC-0000XPSM family? With center frequencies ranging from 7.90 GHz to 36 GHz, this family of filters features excellent stopband suppression and fast roll-off. They have also undergone extensive testing to show minimal variability over temperature and can even handle up to 10W.…
Traditional base-station RF power amplifiers often use Laterally-diffused Metal-oxide Semiconductor (LDMOS) devices to meet cost-efficiency requirements. To boost performance, many designers are now exploring alternative design solutions using high-performance GaN devices or GaN on SiC Power Amplifiers. However, several challenges make GaN devices significantly different from your standard LDMOS FET devices. Five considerations for designing with GaN devices include Bias Sequencing, Vgs Drift, Temperature Compensations Requirements, Gate Leakage current requirements and the Thermal Measurement Process for MTTF Calculations. Figure 1: Typical GaN HEMT structure. Source: Semiconductor Today Bias Sequencing Typically, most AlGaN/GaN High Electron Mobility Transistor (HEMT) RF Field Effect Transistors (FET) devices are on, and full…
What made you select Renesas’ F6212 as a product to feature? The F6212 is a 16-channel, dual-beam, receive active beamforming, RFIC multi-chip module designed for applications in Ka-Band SATCOM planar phased array antennas. What are the key features and specifications of the F6212? The IC has eight RF input ports, two RF output ports, and 16 (8 per beam) phase/amplitude control channels. The eight input ports may be driven by eight single-polarized elements or four dual-polarized elements of an electronically scanned array (ESA). Enabling precise beam pattern and polarization control, each channel has 6 bits of digital phase gain…
Mobile data demand continues to increase year-over-year and Fifth Generation (5G) systems deliver users high-end performance to meet growing needs. What technologies are helping 5G surpass its 4G predecessor and help consumers and carrier providers alike? The 5 key technologies that enable 5G performance are Dynamic Spectrum Sharing, Carrier Aggregation, Massive MIMO, Fixed Wireless Access (FWA), and access to Millimeter Wave (mmWave) technology. Meeting the Increased Demand for Mobile Data Just how fast is mobile data demand growing? In 2017 Cisco Systems predicted that in 2021, more members of the global population would use mobile phones (5.5 billion) than bank…
1. What made you select this product to feature? How does this product differentiate from others/what value does it offer? Qorvo’s QPA1724 is a 20W GaN-on-SiC power amplifier (PA) that is optimal for wide bandwidth multi-carrier, high data throughput satellite applications. Operating in the Ku-K Band at 17.3 to 21.2 GHz, the QPA1724 delivers twice the power of competing PAs. Offered in a compact, surface-mount package, this PA offers wideband linear power, gain, and high efficiency. 2. What are the key features/specifications of this product? Frequency Range: 17.3 - 21.2GHz PSAT (PIN = 27 dBm): 43 dBm PAE (PIN = 29 dBm):…
Industry Leading, Advanced Rugged 2 Kilowatt, 65V LDMOS RF Power TransistorRFMW’s RF Power Business Development Manager, Tim Daniels, recommends Ampleon’s ART2K0FE Advanced Rugged Transistor (ART) for industrial, scientific, and medical applications between HF and 400 MHz. It is an unmatched 65 Volt LDMOS transistor that has a high breakdown voltage, providing excellent VSWR ruggedness of 65:1. High gain and efficiency at high frequencies are achieved with low output capacitance. The ART2K0FE is designed for broadband operation, and high-power applications up to 2 KW and offered in an industry-standard package, air-cavity ceramic SOT539AN for easy integration. Additionally, the ART2K0FE is already…