RFMW announces design and sales support for high-gain, high-efficiency transistors. NXP’s MRF24G300HSR5 RF power GaN on SiC transistor provides 330 Watts of CW power from 2400 to 2500 MHz for ISM band, RF Energy applications. It’s the first solid state device to exceed the efficiency of magnetrons for industrial heating applications, welding and drying. Other potential uses include medical diathermy and microwave ablation. Operating from a 48V supply, the MRF24G300HSR5 has a pre-matched RF input and boasts 73% efficiency and >15 dB of gain. The higher power density of GaN on SiC enables a high output impedance, making…
Author: RFMW
RFMW announces design and sales support for a half-duplex, transmit/receive integrated circuit. The Renesas F5280 IC is a 4-channel, TRX, half-duplex silicon device using a SiGe BiCMOS process for 28 GHz 5G phased-array applications. The core IC has flexible gain and phase control on each channel to achieve fine beam steering and gain compensation between radiating channels. Designed for 25 to 31GHz operation with fast-beam switching and fast beam-state loading, typical Tx/Rx switching time is 100 ns. Typical gain and phase settling time is 20 ns. The device contains programmable on-chip memory and boasts 3° typical RMS phase…
Adapters are the interfaces between two dissimilar components. While an adapter’s performance is directly proportional to its application and how stringent the requirements, it should have a minimal effect on the fidelity of the signal passing through it and not introduce any new unwanted signal phenomenon. For example, the user should not see an excessive signal power loss over frequency or over-moding (where a signal loss in a small frequency bandwidth results in an insertion loss dip). When choosing an adapter for measurements, users are presented with options or grades of performance. Common grades include calibration, instrumentation, general purpose,…
RFMW announces design and sales support for a high performance power amplifier. The Qorvo QPA2610, GaN on SiC amplifier provides 2 W of saturated output power with 23 dB large signal gain from 8.5 to 10.5 GHz. With 47% power-added efficiency at 20 V drain bias, RF ports are matched to 50 Ω and include integrated DC blocking capacitors. The QPA2610 is ideally suited for phased array radar applications where tight lattice spacing is required. Offered in a 5 x 5 mm plastic overmold QFN package.
RFMW announces design and sales support for Knowles – Novacap SV Series capacitor assemblies. SV series capacitors offer high capacitance-to-volume ratio, low equivalent series resistance (ESR) and low equivalent series inductance (ESL) while reducing overall circuit board footprint. Vertical stacking of ceramic capacitors provides far superior performance than either aluminum or tantalum electrolytic capacitors. Up to ten, same size chips, may be stacked with various lead configurations to safeguard against thermal and mechanical stresses as with the SV2220BB476M101LNW-10R, 47uF 100V (VDCW) assembly. 100% tested for dielectric withstanding voltage, insulation resistance, capacitance, and dissipation factor, the capacitors are suited for…
RFMW announces design and sales support for a range of front-end filters incorporating variable gain equalizers. For example, the Sangshin EQ42R1747S75A is a 1747.5 MHz filter with 75 MHz pass band (Band 3 Uplink) which integrates a variable gain equalizer. The equalizer is set via a variable resistor and enables a 1 dB gain variation at the passband low end with negligible effect on the upper end. This adjustment enables the flattest possible passband ripple entering the receive chain before it’s amplified by subsequent LNAs. Coupled with an available Downlink equalizer filter, the EQ42R1747S75A optimizes front-end performance for enterprise…
RFMW announces design and sales support for the Rakon Neptune Ultra Stable TCXO (US-TCXO) product family. The RNT7050 series offers best-in-class frequency stability of ±50 ppb for 5G and other telecommunication applications and is available in a 7×5 mm footprint. The core XMEMS , crystal resonator technology, maintains long-term stability (ageing) of better than 1.5 ppm over 10 years. Meeting the stringent requirements of IEEE 1588v2, ITU-T G.813, G.8273.2 and G.8262 & G.8262.1, the design and engineering of the RNT7050 series recognizes that 5G Remote Radio Head (RRH) air interfaces need tight EVM limit masks, and thus low contribution to…
RFMW announces design and sales support for a high efficiency transistor from Ampleon. The BLP9LA25S(G) is a 25 W device designed for mobile radio applications supporting frequencies from HF to 941 MHz. Operating from a 13.6 V supply with 72% drain efficiency, the BLP9LA25S(G) is ideal for TETRA, SSB and LTE mobile radio applications in VHF and UHF bands. Capable of withstanding a VSWR mismatch of 65:1, it’s extremely rugged and contains integrated dual-sided ESD protection for demanding environments. Mid-band power gain is up to 18.4 dB when biased class-AB. Offered in a gullwing configuration for surface mount applications, a…
RFMW announces design and sales support for a low-loss switch from Qorvo. The QPC7512 is a 75 ohm, SPDT switch operating from 5 to 3300 MHz. Insertion loss ranges from just 0.15 dB at lower frequencies to < 0.7 dB at maximum frequency. Processed using Silicon on Insulator (SOI), this reflective switch is designed for use in Fiber Deep nodes, CATV amplifiers and set top boxes used in 75 ohm environments but can also support 50 ohm designs. Port to port isolation is measured at 42 dB and the QPC7512 requires no external DC blocking capacitors on the RF…
To produce components such as oscillators and filters, resonant frequency circuits comprised of series and parallel inductance and capacitance are required. At lower frequencies, resonant circuits can be constructed with wire-wound coils and parallel-plate capacitors, but at RF and microwave frequencies, designers take advantage of material properties to create resonant structures without the need for individual components. One such common structure is the microwave cavity, a hollow, closed conductor that confines electromagnetic waves. When a radio frequency source is applied to the cavity at one of its resonant frequencies, standing waves are created and the cavity stores electromagnetic energy.…