Author: RFMW

RFMW announces design and sales support for a high power, SMT RF limiter. The RFuW Engineering model RFLM-102402QF-290, silicon, PIN-Diode limiter module offers both high power CW and peak power protection in the L & S-Band region (1 to 4 GHz). Capable of handling average power up to 100 Watts (50 dBm) and pulsed peak power up to 1,000 Watts (60 dBm at pulse width = 25 usec, duty cycle = 5%), the RFLM-102402QF-290 maintains low flat leakage to less than 14 dBm (typical), and reduces spike leakage to less than 0.5 ergs. Recovery time is <3 uSec. The combination…

RFMW announces design and sales support for a GaAs pHEMT/MESFET and GaN HEMT amplifier module. The Qorvo QPA3333 Power Doubler provides 28 dB of gain for DOCSIS 3.1 amplifiers and broadband CATV hybrid modules from 45 to 1218 MHz. Using a single 24V supply, the QPA3333 offers excellent linearity, superior return loss and low noise which provides optimal reliability. By adjusting DC current, distortion vs. power consumption can be optimized over a wide range of output levels. Offered in an 11 x 8.5 mm package.

RFMW announces design and sales support for a 2.4 GHz front-end module (FEM) from Skyworks Solutions. The SKY66404-11, 2.4 GHz FEM is designed for Zigbee®, Thread, and Bluetooth® (including Low Energy) ultra-low power IoT applications spanning sensors, beacons, smart meters and thermostats, wireless cameras, smoke and CO detectors, wearables and medical wearables. The compact (3.5 x 3.0 x 0.82 mm) multi-chip module houses circuitry providing increased efficiency, as well as 4X greater range than stand-alone SoC devices. The module includes a power amplifier, low-noise amplifier, low-loss bypass path, transmit and receive switches, and digital controls compatible with 1.7 V to…

RFMW announces design and sales support for a WiFi 6 (802.11ax) front end module (FEM). The energy efficient Qorvo QPF4288 integrates a 2.4 GHz power amplifier (PA), regulator, SP2T switch, bypassable low noise amplifier (LNA) and coupler into a single device. Optimizing the internal PA for 5V operation while maintaining linear output power and leading-edge throughput, the QPF4288 offers 33 dB of transmit gain and 15.5 dB receive gain with 1.7 dB noise figure. The receive path is pinned out so external filtering can be added in the optimal position while filtering for 2nd and 3rd harmonics as well as…

RFMW announces design and sales support for a high-power transistor from Ampleon. The ART2K0PEG LDMOS power transistor provides 2000 W of pulsed RF energy for ISM applications in the HF to 400 MHz frequency band. Offering 28.5 dB of gain and drain efficiency of 73%, this transistor supports plasma generators, MRI systems, CO2 lasers and particle accelerators. High breakdown voltage enables class E operation up to 50 volts VDS while the ART2K0PEG is qualified up to a maximum VDS of 65 V. The device is characterized from 30 to 65 volts. Integrated dual-sided ESD protection enables class C operation and…

RFMW announces design and sales support for a high linearity gain block from Qorvo. The QPA9127 supports 5G mMIMO and wireless infrastructure with an operational bandwidth of 1 to 6 GHz. Offering a P1dB of 20 dBm, gain is equal to 20 dB and OIP3 measures 35 dBm. Internally matched to 50 ohms, the QPA9127 draws 70 mA from a single 5V supply with DC shutdown control. Offered in a 2x2mm, SMT package.

RFMW announces design and sales support for a high power, SMT RF limiter. The RFuW Engineering model number RFLM-052402QC-290, silicon, PIN-Diode limiter module offers both high power CW and peak power protection in frequency ranges from 50 MHz to 4 GHz. Capable of handling average power up to 200 Watts (53 dBm) and pulsed peak power up to 2000 Watts (63 dBm at pulse width = 25 usec, duty cycle = 5%), the RFLM-052402QC-290 maintains low flat leakage to less than 17 dBm, and reduces spike leakage to less than 0.5 ergs. Maximum recovery time is 1.5 uSec. The combination…

RFMW announces design and sales support for a wide bandwidth, distributed amplifier from Qorvo (Custom MMIC). The CMD284P4, GaAs MMIC distributed amplifier is housed in a leadless, 4×4 mm plastic surface mount package for ease of installation. Operating from DC to 22 GHz and delivering 17 dB of gain, the device offers 19 dBm P1dB and noise figure of 2.5 dB at 10 GHz. Matched to 50 ohms, the CMD284P4 eliminates the need for external RF port matching.

RFMW announces design and sales support for a high frequency, GaN on SiC, power amplifier from Qorvo. Serving X-band radar and EW applications from 10 to 12 GHz, the Qorvo QPM1021 amplifier offers 100 Watts of saturated output power with large signal gain of 20 dB. Power added efficiency (PAE) is >32% for this 28V device drawing 2 amps of current. The QPM1021 is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package, with a pure copper base for superior thermal management. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.

RFMW announces design and sales support for a high linearity amplifier from Qorvo. The QPA9421 power amplifier supports small cells operating in the 2.11 to 2.17 GHz frequency range with up to 27 dBm of linear power and 30 dB of gain. ACLR is -50 dBc at +27 dBm average output power. Drawing 420 mA from a 4.5 volt supply, the QPA9421 also supports femtocells, customer premises equipment and data cards. It can also function as a linear driver in DAS applications, booster amps and repeaters without the need for digital pre-distortion. Internally matched to 50 ohms at both input…