RFMW announces design and sales support for a high gain and high peak-power driver amplifier. The Qorvo QPA9121 provides 28 dB of gain with up to ½ Watt of RF power from 2300 to 5000 MHz. Drawing only 95 mA from a single, 5 V supply, the QPA9121’s low power consumption provides solutions in wireless infrastructure, repeaters and distributed antenna systems. OIP# is 32 dBm from this 50 ohm, internally matched device packaged in a 3 x 3 mm QFN.
Author: RFMW
RFMW announces design and sales support for a high power amplifier with excellent efficiency and linearity. Offering industry leading 35 Watts of X-Band power for satellite communications, radar and PtP applications, Qorvo’s QPA1006D is a wide band GaN on SiC power amplifier covering 10.7 – 12.7 GHz. Large-signal gain is >17 dB while achieving >39% power-added efficiency. Small signal gain is 22 dB. The QPA1006D is available as a 6.0 x 4.2 mm DIE.
RFMW announces design and sales support for a high performance amplifier from Integrated Device Technology, Inc. (IDT). The F1421 amplifier offers high gain and high reliability due to Silicon DIE construction and exposed paddle, QFN packaging. The device provides 40 dBm OIP3 with 20 dBm P1dB output power and 20.3 dB gain. The F1421 operates over a range of 1700 to 2200 MHz and requires a single 5V supply drawing 138 mA. Operating temperature range is -40 to +105 degrees C for base station applications in PCS1900, DCS1800, LTE, WiMAX, PHS, UMTS and public safety infrastructure. Packaged as a small,…
RFMW announces design and sales support for a series of mmWave, 5G circulators from DiTom Microwave. The D3C2731Q circulator covers Ka-band frequencies from 27 to 31 GHz with 20 dB of isolation. A single-junction design, insertion loss is only 0.6 dB maximum, preserving precious power in the mmWave bands. Average power handing is 5W (30W peak). The D3C2731Q is offered with 2.4 mm female connectors having a maximum VSWR of 1.25:1 and are available with any combination of male or female connectors on the input/output. 2.92 mm (K) connectors are also an option. With operating temperatures from -20 to +65…
RFMW announces design and sales support for an 802.11ax front end module (FEM). The Qorvo QPF4530 optimizes the power amplifier for 3.3 V operation providing energy efficiency with high capacity throughput. Integrating a 5 GHz power amplifier (PA), regulator, single-pole two-throw switch (SP2T), bypassable low noise amplifier (LNA), and power detector into a small 3 x 3 mm package, it also contains DIE level filtering for 2nd and 3rd harmonics as well as 2.4 GHz rejection. Designed for enterprise systems and service providers, the QPF4530 provides 30 dB of Tx gain and 15 dB of Rx gain with LNA noise…
RFMW announces design and sales support for a high-power transistor from Ampleon. The BLS9G2731L-400U is a 32 Volt LDMOS power transistor for use in 2700 to 3100 MHz, S-Band radar applications. With 400 W pulsed power capability in class-AB circuits, the BLS9G2731L-400U offers 47% efficiency with up to 13 dB of gain. Capable of withstanding output mismatches of 10:1, the excellent ruggedness and thermal stability of this transistor makes it ideal for mission critical applications. Easy power control (no sequencing), internal matching and flexibility with respect to pulse formats makes LDMOS an economical option to alternate technologies. Also available in…
RFMW announces design and sales support for a high efficiency, high linearity DIE for X-band applications. The Qorvo QPA1009D is a wide band power amplifier MMIC targeted for Satellite Communications, X-band Radar, and Point to Point Communications. This GaN on SiC PA covers 10.7 – 12.7 GHz providing greater than 17.5 Watts of saturated output power and 17 dB of large-signal gain while achieving > 40% power-added efficiency. The QPA1009D is available as a 3.1 x 4.2 mm DIE.
RFMW announces design and sales support for an 802.11ax (WiFi 6) front-end module (FEM) from Skyworks Solutions. The SKY85748-11 offers high level integration with a 5 GHz SPDT transmit/receive (T/R) switch, a 5 GHz LNA with bypass, and a 5 GHz power amplifier offering 24.5 dBm peak output power @ MCS0. Intended for Enterprise applications, power dissipation at 21 dBm is only 1.15 Watts using a 3.3V supply, ideal for Power-over-Ethernet (POE) designs. The integrated logarithmic power detector provides closed-loop power control with sensitivity down to 5 dBm. Transmit gain is 32 dB while receive gain is 13 dB on…
RFMW announces design and sales support for a GaAs pHEMT/MESFET 75-ohm Power Doubler amplifier. The Qorvo QPA3357 provides over 28 dB of flat gain and low noise of 4.5 dB for DOCSIS 3.1 amplifiers and broadband CATV hybrid modules from 47 to 1218 MHz. Using a single 24V supply, the QPA3357 offers low noise and low distortion at high efficiency, consuming only 10.5 Watts of DC power in an industry standard SOT-115J package. With CSO of -81 dBc and CTB of -83 dBc, this amplifier provides 57 dBmV/ch virtual at 1.2 GHz, with 19 dB tilt.
RFMW announces design and sales support for a high gain / high linearity amplifier from Integrated Device Technology, Inc. (IDT). The F1420 amplifier offers very high reliability due to Silicon DIE construction and exposed paddle, QFN packaging. OIP3 is up to 42 dBm with 23.2 dBm P1dB output power and 17.4 dB gain. The F1420 operates over a range of 700 to 1100 MHz and requires a single 5V supply drawing 105 mA. Operating temperature range is -40 to +105 degrees C for base station applications in GSM850/900, PCS1900, DCS1800, LTE, WiMAX, PHS, UMTS and public safety infrastructure. Packaged as…